inchange semiconductor product specification silicon npn power transistors 2SC3974 description with to-3pfa package high voltage high speed switching wide area of safe operation applications for high voltage,and high speed switching applications. pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 800 v v ceo collector-emitter voltage open base 500 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 7 a i cp collector current (pulse) 15 a i b base collector current (dc) 4 a t c =25 80 p c collector power dissipation t a =25 3 w t j max.operating junction temperature 150 t stg storage temperature -55~150
inchange semiconductor product specification 2 silicon npn power transistors 2SC3974 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 500 v v ce(sat) collector-emitter saturation voltage i c =4a ;i b =0.8a 1.0 v v be(sat) base-emitter saturation voltage i c =4a ;i b =0.8a 1.5 v i cbo collector cut-off current v cb =800v; i e =0 0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe-1 dc current gain i c =0.1a ; v ce =5v 15 h fe-2 dc current gain i c =4a ; v ce =5v 8 f t transition frequency i c =0.5a ; v ce =10v,f=1mhz 20 mhz switching times t on turn-on time 1.0 s t s storage time 3.0 s t f fall time i c =4a ;i b1 =0.8a ,i b2 =-1.6a v cc =200v 0.3 s
inchange semiconductor product specification 3 silicon npn power transistors 2SC3974 package outline fig.2 outline dimensions (unindicated tolerance: 0.30mm)
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